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| GP1S30 GP1S30 s Features 1. Compact package 2. PWB mouning type 3. Double-phase phototransistor output type for detecting of rotation direction and count 4. Detecting pitch : 0.6mm Subminiature Photointerrupter s Outline Dimensions 1 2 1 Anode 2 Cathode AA'Section Slit width of emitter side ( Unit : mm ) Internal connection diagram PT1 PT2 5 4 3 s Applications 1. Mouses 2. Cameras 3.8 1.45 Center of light path B (0.8) 0.9 A (C0.6) 3 Emitter2 4 Emitter1 5 Collector BB'Section 4.0 (1.0) 2 - (0.37) 2.5 (1.0) 4.0 g 2.54 5 1 g 1.27 g 1.27 4 3 2 * Tolerance : 0.2mm * Burr's dimensions: 0.15MAX. * Rest of gate : 0.3MAX. * ( ) : Reference dimensions * The dimensions indicated by g refer to those measured from the lead base. s Absolute Maximum Ratings Prameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Output Emitter-collector Voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *1 Soldering temperature *1 For MAX. 5 seconds ( Ta = 25C ) Symbol IF VR P V CE 1O V CE 2O V E 1CO V E 2CO IC PC P tot T opr T stg T sol Rating 50 6 75 35 6 20 75 100 - 25 to + 85 - 40 to + 100 260 Unit mA V mW V V mA mW mW C C C 1mm or more Soldering area Input " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device." 4.0MIN. B' A' (C0.3) Rest of gate (2) 5- 0.15 + 0.2 5 - 0.4 - 0.1 5.0 GP1S30 s Electro-optical Characteristics Input Output Transfer characteristics Parameter Forward voltage Reverse current Collector dark current Collector current Collector-emitter saturation voltage Rise time Response time Fall time Symbol VF IR ICEO IC V CE(sat) tr tf Conditions IF = 20mA VR = 3V VCE = 20V VCE = 5V, I F = 4mA IF = 8mA, I C = 125 A VCC = 5V, I C = 100 A RL = 1 000 MIN. 250 TYP. 1.2 50 50 ( Ta = 25C ) MAX. 1.4 10 100 1 000 0.4 150 150 Unit V A nA A V s s Fig. 1 Forward Current vs. Ambient Temperature 60 Fig. 2 Power Dissipation vs. Ambient Temperature 120 P tot 50 Forward current I F ( mA ) Power dissipation P ( mW ) 100 40 80 P, P c 30 60 20 40 10 0 - 25 20 0 - 25 0 25 50 75 85 100 0 25 50 75 85 100 Ambient temperature T a ( C ) Ambient temperature T a ( C ) Fig. 3 Forward Current vs. Forward Voltage 500 200 Forward current I F ( mA ) 100 50 20 10 5 T a = 75C 50C 25C 0C - 25C Fig. 4 Collector Current vs. Forward Current VCE = 5V T a = 25C 10.0 Collector current I C ( mA ) 8.0 6.0 4.0 2.0 2 1 0 0.5 1 1.5 2 2.5 3 Forward voltage V F ( V ) 0 0 10 20 30 40 50 Forward current I F ( mA ) GP1S30 Fig. 5 Collector Current vs. Collector-emitter Voltage T a = 25C 10 500 Collector current I C ( mA ) I F = 50mA 6 40mA 30mA 4 20mA 10mA 4mA 0 0 2 4 6 8 10 - 25 0 25 50 75 85 Collector-emitter voltage V CE ( V ) Ambient temperature Ta ( C ) Collector current IC ( A) 8 Fig. 6 Collector Current vs. Ambient Temperature 600 400 300 200 2 100 Fig. 7 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.17 Collector-emitter saturation voltage VCE(sat) ( V ) 0.16 0.15 0.14 0.13 0.12 0.11 0.10 - 25 0 25 50 75 85 I F = 8mA I C = 125 A Fig. 8 Collector Dark Current vs. Ambient Temperature 10 - 6 5 V CE = 20V ( A) CEO 2 10 - 7 5 2 Collector dark current I 10 - 8 5 2 10 - 9 5 2 10 - 10 0 25 50 75 100 Ambient temperature Ta ( C ) Ambient temperature T a ( C ) Fig. 9 Response Time vs. Load Resistance 500 VCE = 5V I C = 100 A T a = 25C Response time ( s ) 100 td ts Input RD tr Test Circuit for Response Time tf VCC RL Output Input Output 10 10% 90% td tr 1 0.5 1 10 Load resistance R L ( k ) 50 ts tf GP1S30 Fig.10 Relative Collector Current vs. Shield Distance ( 1 ) Shield Relative collector current ( % ) Fig.11 Relative Collector Current vs. Shield Distance ( 2 ) Moving distance 100 90 80 70 60 50 40 30 20 10 L= 0 I F = 4mA VCE = 5V Shield L 100 Relative collector current ( % ) 90 80 70 60 50 40 30 20 10 1 2 L L= 0 I F = 4mA VCE = 5V 3 0.5 1 1.5 2 Shield distance L ( mm ) Shield distance L ( mm ) q Please refer to the chapter "Precautions for Use". |
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